We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
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机译:我们研究了在平行于隧道电流的磁场下n型GaAs / AlAs / GaAlAs共振隧穿二极管的偏振分辨光致发光。在共振隧穿条件下,我们观察到了两条归因于中性(X)和带负电荷的激子(X-)的发射线。我们已经从两条线的量子阱发射观察到了电压控制的圆极化度,在低电压下15 T时其值高达-88%,这归因于在堆积层形成的2D气体的有效自旋注入。
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